Prekės informacija
Bendrosios charakteristikos
Prekės tipas
Prekės ženklas
Techniniai duomenys
Operatyviosios atminties tipas
Atminties talpa
Atminties ciklo uždelsimas
Operatyviosios atminties taktinis dažnis
Įtampa
1.2 V
Klaidų taisymo kodas (ECC)
Taip
Papildomai
Garantija
24 mėn
Papildoma informacija
Registruota atmintis
Prekės atspalvis gali skirtis nuo matomo nuotraukoje.
Kingston 16GB 2400MHz CL17 DDR4 ECC
Prekės aprašymas anglų kalba:

Kingston's KSM24RD8/16HAI is a 2G x 72-bit (16GB)
DDR4-2400 CL17 SDRAM (Synchronous DRAM) registered w/
parity, 2Rx8, ECC, memory module, based on eighteen 1G x
8-bit FBGA components. The SPD is programmed to JEDEC
standard latency DDR4-2400 timing of 17-17-17 at 1.2V. Each
288-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
• Power Supply: VDD=1.2V
• VDDQ = 1.2V
• VPP - 2.5V
• VDDSPD=2.25V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported
Prekės aprašymas anglų kalba:

Kingston's KSM24RD8/16HAI is a 2G x 72-bit (16GB)
DDR4-2400 CL17 SDRAM (Synchronous DRAM) registered w/
parity, 2Rx8, ECC, memory module, based on eighteen 1G x
8-bit FBGA components. The SPD is programmed to JEDEC
standard latency DDR4-2400 timing of 17-17-17 at 1.2V. Each
288-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
• Power Supply: VDD=1.2V
• VDDQ = 1.2V
• VPP - 2.5V
• VDDSPD=2.25V to 2.75V
• Functionality and operations comply with the DDR4 SDRAM datasheet
• 16 internal banks
• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or different bank group accesses are available
• Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600
• Bi-Directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
• Supports ECC error correction and detection
• On-Die Termination (ODT)
• Temperature sensor with integrated SPD
• This product is in compliance with the RoHS directive.
• Per DRAM Addressability is supported
• Internal Vref DQ level generation is available
• Write CRC is supported at all speed grades
• CA parity (Command/Address Parity) mode is supported
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