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Operatyvioji atmintis (RAM) Team Group Elite Plus TED58G4800C40016, DDR5, 8 GB, 4800 MHz | Kompiuterinė technika, biuro prekės | Https://senukai-lt-web-test.ksd.zone | 0
Operatyvioji atmintis (RAM) Team Group Elite Plus TED58G4800C40016, DDR5, 8 GB, 4800 MHz | Kompiuterinė technika, biuro prekės | Https://senukai-lt-web-test.ksd.zone | 1
Operatyvioji atmintis (RAM) Team Group Elite Plus TED58G4800C40016, DDR5, 8 GB, 4800 MHz | Kompiuterinė technika, biuro prekės | Https://senukai-lt-web-test.ksd.zone | 2
Operatyvioji atmintis (RAM) Team Group Elite Plus TED58G4800C40016, DDR5, 8 GB, 4800 MHz | Kompiuterinė technika, biuro prekės | Https://senukai-lt-web-test.ksd.zone | 3
Operatyvioji atmintis (RAM) Team Group Elite Plus TED58G4800C40016, DDR5, 8 GB, 4800 MHz | Kompiuterinė technika, biuro prekės | Https://senukai-lt-web-test.ksd.zone | 4

Operatyvioji atmintis (RAM) Team Group Elite Plus TED58G4800C40016, DDR5, 8 GB, 4800 MHz


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Prekės ženklas

Team Group

Serija

Elite Plus

Modelis

TED58G4800C40016

Techniniai duomenys

Operatyviosios atminties tipas

DDR5

Atminties talpa

8 GB

Atminties ciklo uždelsimas

CL40

Operatyviosios atminties taktinis dažnis

4800 MHz

Šilumos skirstytuvas

Ne

Su apšvietimu

Ne

Įtampa

1.1 V

X.M.P.

Ne

Klaidų taisymo kodas (ECC)

Taip

Papildomai

Garantija

24 mėn

Prekės atspalvis gali skirtis nuo matomo nuotraukoje.

Increased Fundamental Frequency, Faster Speeds

Minimum specifications reach an ultra-high frequency of 4800MHz, 50% more from the 3200MHz standard frequency maximum of DDR4 modules. Let our DDR5 help you breeze through all your boring, mundane tasks.

Unleashed Capacity, Stronger Multitasking

DDR5 kit is available from a 8GB capacity per module and, in compliance with JEDEC standards, can be expanded to 128GB capacity to uncap your memory and deliver a smooth multitasking experience.

Improved Structural Composition, Greater Efficiency

Factors critical to improved performance include increased banks and burst lengths. DDR5 allows up to 32 banks (storage units that can be enabled/disabled separately) comprised from 8 bank groups, doubling the access availability from the 16 banks available in DDR4 standards; the DDR5 burst length (amount of data that can be accessed from a single DRAM read/write command) is also twice as much as DDR4 burst lengths.

Reduced Working Voltage, Better Energy Efficiency

Standard working voltage has been reduced from the 1.2V in DDR4 modules to 1.1V, reducing energy consumption for each bandwidth to conserve energy and reduce your burden. To minimize noise interference, the power management has been transferred from motherboard to RAM and will be complimented with a PMIC for effective system load management.

On-die ECC, Stable Performance

DDR5 memory modules support on-die ECCs, a feature that self-corrects DRAM cells, to deliver stability to DRAM systems using DDR5.

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